Paper Title:
Bistable Defects as the Cause for NBTI and RTN
  Abstract

Over the last few decades convincing evidence has been collected demonstrating that the oxide reliability is most seriously affected by hole trapping into defects. Recently, valuable information has been delivered by a newly developed measurement technique called time-dependent defect spectroscopy (TDDS), which allows to analyze the behavior of single defects. It indicates the existence of additional metastable defect configurations which are necessary to explain various features seen in TDDS. In this study, it will be shown that these bistable defects may also be the origin of noise phenomena, such as temporary and anomalous random telegraph noise observed in MOSFETs.

  Info
Periodical
Solid State Phenomena (Volumes 178-179)
Chapter
Chapter 12: Modeling and Simulation
Edited by
W. Jantsch and F. Schäffler
Pages
473-482
DOI
10.4028/www.scientific.net/SSP.178-179.473
Citation
W. Goes, F. Schanovsky, H. Reisinger, B. Kaczer, T. Grasser, "Bistable Defects as the Cause for NBTI and RTN", Solid State Phenomena, Vols. 178-179, pp. 473-482, 2011
Online since
August 2011
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Price
$32.00
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