Paper Title:
Reconstruction of a High Angle Tilt (110)/(001) Boundary in Si Using O-lattice Theory
  Abstract

High angle close to 90° tilt Si boundary created by direct wafer bonding (DWB) using SmartCut® technology is studied in this work. Experimental identification of defects and morphologies at the interface is realized using conventional transmission electron microscopy (TEM) and geometric phase analysis (GPA) of high-resolution TEM images. Atom reconstruction of the interface along the direction is carried out within the frame of the O-lattice theory. We demonstrate that to preserve covalent bonding across the interface it should consist of facets intersected by a maximum of six planes with three 90° Shockley dislocations per facet. For a long enough interface the formation of Frank dislocations is predicted with a period equal 6 times that of Shockley dislocations. Long range undulations of the interface are shown to be related directly to a deviation from exact 90° tilt of the layer with respect to the substrate.

  Info
Periodical
Solid State Phenomena (Volumes 178-179)
Chapter
Chapter 12: Modeling and Simulation
Edited by
W. Jantsch and F. Schäffler
Pages
489-494
DOI
10.4028/www.scientific.net/SSP.178-179.489
Citation
N. Cherkashin, O. Kononchuk, M. Hÿtch, "Reconstruction of a High Angle Tilt (110)/(001) Boundary in Si Using O-lattice Theory", Solid State Phenomena, Vols. 178-179, pp. 489-494, 2011
Online since
August 2011
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Price
$32.00
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