Paper Title:
Application of Double Crucible in Cz Si Crystal Growth
  Abstract

The numerical modeling of melt flow, heat transfer and impurity (phosphorus) diffusion in the double crucible of "Redmet-90M" Cz puller was carried out in an application to a 200 mm diameter Si single crystal growth. The double crucible consists of two coaxial crucibles having different sizes: 490 mm (external) and 300 mm (internal) inner diameters. The bottom of internal crucible has a central hole of Do = 6 and 12 mm diameter for melt inflow from the external crucible. During crystal pulling the granulated Si was added in the external crucible and a melt of the internal crucible was doped by phosphorus. Three-dimensional features of a rotating melt flow affecting on heat transfer and impurity diffusion in the internal crucible were analyzed. In particular, the melt precession and thermal asymmetry near the liquid-solid interface (LSI) in the internal crucible are discussed. It is shown that a significant phosphorus losses caused by its evaporation from a melt surface may be compensated by additional phosphorus doping in the internal crucible.

  Info
Periodical
Solid State Phenomena (Volumes 178-179)
Chapter
Chapter 12: Modeling and Simulation
Edited by
W. Jantsch and F. Schäffler
Pages
501-506
DOI
10.4028/www.scientific.net/SSP.178-179.501
Citation
A.I. Prostomolotov, N.A. Verezub, "Application of Double Crucible in Cz Si Crystal Growth", Solid State Phenomena, Vols. 178-179, pp. 501-506, 2011
Online since
August 2011
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Price
$32.00
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