Paper Title:
Classification of Recombination-Active Defects in Multicrystalline Solar Cells Made from Upgraded Metallurgical Grade (UMG) Silicon
  Abstract

In this contribution a classification of recombination active defects in multicrystalline silicon solar cells made from electronic grade (eg) and upgraded metallurgical grade (umg) silicon feedstock is introduced. On a macroscopic scale the classification is performed by using forward and reversed biased electroluminescence imaging (EL / ReBEL) and imaging of sub-band defect luminescence (ELsub). The luminescence behavior due to structural defects already present in the wafer can be divided into two groups based on their recombination and prebreakdown behavior. As a first step towards a more detailed analysis of the cause for these differences, the classification was also performed on microscopic scale. For this ReBEL and ELsub was performed under an optical microscope (µReBEL/µELsub) and EL was replaced by Electron Beam Induced Current (EBIC). The defect types observed on a macroscopic scale could also be observed on a microscopic scale; however, a third defect type had to be introduced. Finally we propose a qualitative model for the different classified types of recombination active defect structures that can explain the observed recombination and prebreakdown behavior.

  Info
Periodical
Solid State Phenomena (Volumes 178-179)
Chapter
Chapter 3: Crystalline Silicon for Solar Cells
Edited by
W. Jantsch and F. Schäffler
Pages
88-93
DOI
10.4028/www.scientific.net/SSP.178-179.88
Citation
D. Lausch, R. Bakowskie, M. Lorenz, S. Schweizer, K. Petter, C. Hagendorf, "Classification of Recombination-Active Defects in Multicrystalline Solar Cells Made from Upgraded Metallurgical Grade (UMG) Silicon", Solid State Phenomena, Vols. 178-179, pp. 88-93, 2011
Online since
August 2011
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Price
$32.00
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