Paper Title
Page
Authors: Vincent Quemener, Mari Alnes, Lasse Vines, Ola Nilsen, Helmer Fjellvåg, Eduard Monakhov, Bengt G. Svensson
Chapter 4: Co-Integration of Si and Ge, III-V, Graphenes, Organo-Silica Devices
Abstract:ZnO/n-Si and ZnO/p-Si heterostructures were prepared by Atomic layer deposition (ALD) and the electronic properties have been investigated by...
130
Authors: Vladimir V. Voronkov, Robert Falster, Karsten Bothe, Bianca Lim, Jan Schmidt
Chapter 5: Point Defects in Si
Abstract:Illumination-induced degradation of minority carrier lifetime was studied in n-type Czochralski silicon co-doped with phosphorus and boron....
139
Authors: Charalamos A. Londos, Efstratia N. Sgourou, A. Andrianakis, Andrzej Misiuk, Valentin V. Emtsev, H. Ohyama
Chapter 5: Point Defects in Si
Abstract:This paper reports experimental results on the production and annealing of oxygen-vacancy related (VOn, 1<n<5) and...
147
Authors: Nikolai Yarykin, Jörg Weber
Chapter 5: Point Defects in Si
Abstract:Results of a DLTS study on the deep-level centers in the copper-contaminated electron-irradiated FZ-Si are presented. Copper was diffused...
154
Authors: Jasmin Hofstetter, Jean François Lelièvre, David P. Fenning, Mariana I. Bertoni, Tonio Buonassisi, Carlos del Cañizo
Chapter 5: Point Defects in Si
Abstract:The evolution of Fe-related defects is simulated for di erent P di usion gettering (PDG) processes which are applied during silicon solar...
158
Authors: Lyudmila I. Khirunenko, Yurii V. Pomozov, Mikhail G. Sosnin, Nikolay V. Abrosimov, H. Riemann
Chapter 5: Point Defects in Si
Abstract:The effect of tin on the formation and temperature transformation of VO centers in Ge upon annealing has been investigated. It was found that...
166
Authors: Lin Chen, Xue Gong Yu, Peng Chen, Xin Gu, Jing Gang Lu, De Ren Yang
Chapter 5: Point Defects in Si
Abstract:Silicon wafers with different carbon contents have been characterized by Fourier transform infrared spectroscopy technique. An infrared...
172
Authors: Lyudmila I. Khirunenko, Yurii V. Pomozov, Mikhail G. Sosnin, A.V. Duvanskii
Chapter 5: Point Defects in Si
Abstract:In silicon with high oxygen and boron content a new absorption band situated near 1026 cm-1 was found in Si after light...
178
Authors: Chi Kwong Tang, Lasse Vines, Bengt G. Svensson, Eduard Monakhov
Chapter 5: Point Defects in Si
Abstract:The interaction between hydrogen and the iron-boron pair (Fe-B) has been investigated in iron-contaminated boron-doped Cz-Si using...
183
Authors: Julien Nicolai, Nelly Burle, Bernard Pichaud
Chapter 5: Point Defects in Si
Abstract:High temperature annealing effects on Oxygen-induced defects formation has been studied by IR-LST, FTIR and TEM techniques. The results show...
188
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