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Gettering and Defect Engineering in Semiconductor Technology XIV

Volumes 178 - 179
doi: 10.4028/www.scientific.net/SSP.178-179
Paper Titles published in this Main Theme:
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Paper Title Page

Electronic Properties of ZnO/Si Heterojunction Prepared by ALD.

Authors: Vincent Quemener, Mari Alnes, Lasse Vines, Ola Nilsen, Helmer Fjellvåg, Eduard Monakhov, Bengt G. Svensson

130

The Nature of Lifetime-Degrading Boron-Oxygen Centres Revealed by Comparison of P-Type and N-Type Silicon

Authors: Vladimir V. Voronkov, Robert Falster, Karsten Bothe, Bianca Lim, Jan Schmidt

139

IR Studies on VON, CIOI and CICS Defects in Ge-Doped Cz-Si

Authors: Charalamos A. Londos, Efstratia N. Sgourou, A. Andrianakis, Andrzej Misiuk, Valentin V. Emtsev, H. Ohyama

147

Formation of Copper-Related Deep-Level Centers in Irradiated P-Type Silicon

Authors: Nikolai Yarykin, Jörg Weber

154

Towards the Tailoring of P Diffusion Gettering to As-Grown Silicon Material Properties

Authors: Jasmin Hofstetter, Jean François Lelièvre, David P. Fenning, Mariana I. Bertoni, Tonio Buonassisi, Carlos del Cañizo

158

Peculiarities of Formation and Annealing of VO-Related Defects in Ge Doped with Tin

Authors: Lyudmila I. Khirunenko, Yurii V. Pomozov, Mikhail G. Sosnin, Nikolay V. Abrosimov, H. Riemann

166

1207cm-1 Infrared Absorption Band in Carbon-Rich Silicon Crystal

Authors: Lin Chen, Xue Gong Yu, Peng Chen, Xin Gu, Jing Gang Lu, De Ren Yang

172

Boron-Oxygen-Related Defect in Silicon

Authors: Lyudmila I. Khirunenko, Yurii V. Pomozov, Mikhail G. Sosnin, A.V. Duvanskii

178

Hydrogen-Induced Dissociation of the Fe-B Pair in Boron-Doped P-Type Silicon

Authors: Chi Kwong Tang, Lasse Vines, Bengt G. Svensson, Eduard Monakhov

183

Evolution of Oxygen Associated Defects in Cz Silicon during Thermal Annealing Treatments: Comparison between Experiment and Simulation

Authors: Julien Nicolai, Nelly Burle, Bernard Pichaud

188

Showing 21 to 30 of 80 Paper Titles
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