Paper Title
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Authors: David Lysáček, Jan Šik, Petr Bábor
Chapter 9: Gettering, Passivation and Defect Engineering
Abstract:We report on a new method of external gettering in silicon substrate for semiconductor applications. The proposed method is based on the...
385
Authors: Vladimir P. Markevich, Anthony R. Peaker, Bruce Hamilton, Valentin V. Litvinov, Yurii M. Pokotilo, Alla N. Petukh, Stanislav B. Lastovskii, Jose Coutinho, Mark J. Rayson, Patrick R. Briddon, Patrick R. Briddon
Chapter 9: Gettering, Passivation and Defect Engineering
Abstract:We have recently shown that Sn impurity atoms are effective traps for vacancies (V) in Ge:Sn crystals irradiated with MeV electrons at room...
392
Authors: Pavel Hazdra, Volodymyr Komarnitskyy, Vilma Buršíková
Chapter 9: Gettering, Passivation and Defect Engineering
Abstract:The isotopic effect of hydrogen and deuterium on hydrogenation of radiation defects introduced in n-type float zone and Czochralski silicon...
398
Authors: Mykola Kras'ko, Anatolii Kraitchinskii, Andrii Kolosiuk, Volodymyr Neimash, Vasyl Voitovych, V.A. Makara, Ruslan Petrunya, Vasyl Povarchuk
Chapter 9: Gettering, Passivation and Defect Engineering
Abstract:Accumulation kinetics of vacancy-oxygen (VO) complexes in Czochralski (Cz) n-Si at 360 °C and 1 MeV electron pulse irradiation has been...
404
Authors: Pawel Kaminski, Roman Kozlowski, Stanislawa Strzelecka, Andrzej Hruban, Elzbieta Jurkiewicz-Wegner, Miroslaw Piersa, Michal Pawlowski, Marek Suproniuk
Chapter 9: Gettering, Passivation and Defect Engineering
Abstract:The charge compensation in undoped GaP single crystals is investigated by modeling the Fermi level position for various concentrations of...
410
Authors: Jadwiga Bak-Misiuk, Andrzej Misiuk, Adam Barcz, Przemyslaw Romanowski
Chapter 9: Gettering, Passivation and Defect Engineering
Abstract:Solid phase epitaxial regrowth (SPER) of amorphized layer in Czochralski grown silicon (Cz-Si) created by self-implantation (Si+ dose 2x1016...
416
Authors: Jan Vobecký, Volodymyr Komarnitskyy, Vít Záhlava, Pavel Hazdra
Chapter 9: Gettering, Passivation and Defect Engineering
Abstract:Low-temperature diffusion of Cr, Mo, Ni, Pd, Pt, and V in silicon diodes is compared in the range 450 - 800 oC. Before the diffusion, the...
421
Authors: Aurimas Uleckas, Eugenijus Gaubas, Tomas Ceponis, Kestutis Zilinskas, Rimas Grigonis, Valdas Sirutkaitis, Jan Vanhellemont
Chapter 9: Gettering, Passivation and Defect Engineering
Abstract:The characteristics of the band-to-band Auger recombination in Czochralski-grown high resistivity Si and Ge single crystals have been studied...
427
Authors: Tine Uberg Naerland, Birger Retterstøl Olaisen, Lars Arnberg
Chapter 10: Advanced Solar Cells
Abstract:A review of light soaking of solar cells by the use of commercial IV-characterization instruments is presented. The paper addresses the...
435
Authors: Wolfgang Wille, Ralph Rothemund, Gerald Meinhardt, Wolfgang Jantsch
Chapter 10: Advanced Solar Cells
Abstract:Instead of selective emitter technology we investigate an alternative way to optimize contact formation and increased blue responsivity of...
441
Showing 61 to 70 of 80 Paper Titles