Paper Title:
Good Quality N (a-Si)-P+(Na-Si)-P (μC-Si) Tunnel Junction for Tandem Solar Cells
  Abstract

A new tunnel-recombination junction model was proposed to increase the recombination of n/p junctions in tandem solar cells. According to the model, we fabricated a new tunnel junction with a nanostructured amorphous silicon p+ (na-Si p+) layer inserted between the n layer and the p layer. To compare with the conventional method, we fabricated another tunnel junction with an amorphous p+ (a-Si p+) insertion layer. Both devices were characterized by their dark current-voltage behavior (I-V), activation energy (Ea) and quantum efficiency (QE). The result shows that the tunnel junction with a na-Si p+ insertion layer has higher recombination rates with higher density of defect states of about 2.7×1019cm-3 , lower resistance with activation energy of 22meV. The tunnel junction with a na-Si p+ insertion layer could be easily integrated into the tandem solar cell deposition process.

  Info
Periodical
Solid State Phenomena (Volumes 181-182)
Chapter
V. Related Materials
Edited by
Yuan Ming Huang
Pages
336-339
DOI
10.4028/www.scientific.net/SSP.181-182.336
Citation
L. L. Chen, M. J. Shi, J. H. Yu, "Good Quality N (a-Si)-P+(Na-Si)-P (μC-Si) Tunnel Junction for Tandem Solar Cells", Solid State Phenomena, Vols. 181-182, pp. 336-339, 2012
Online since
November 2011
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$32.00
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