Paper Title:
Influence of Deposition Temperature on Microcrystalline Silicon Thin Film Prepared by Plasma Enhanced Chemical Vapor Deposition
  Abstract

The influence of deposition temperature (Ts) on glass/stainless steel-based intrinsic amorphous/microcrystalline silicon thin film prepared at different temperature was investigated by PECVD technology. The crystallization ratio and grain size of the silicon thin film at different deposition temperature is studied. The results reveal that the crystallization ratio and grain size of silicon thin film changed along with Ts. The crystallization ratio and grain size of the silicon thin film become larger when Ts=400 °C. On this work, optimal μc-Si:H can be obtained at 400°C deposition temperature in the suitable experimental conditions.

  Info
Periodical
Solid State Phenomena (Volumes 181-182)
Chapter
V. Related Materials
Edited by
Yuan Ming Huang
Pages
401-404
DOI
10.4028/www.scientific.net/SSP.181-182.401
Citation
L. L. Chen, S. Z. Wang, Y. P. Yin, M. J. Shi, "Influence of Deposition Temperature on Microcrystalline Silicon Thin Film Prepared by Plasma Enhanced Chemical Vapor Deposition", Solid State Phenomena, Vols. 181-182, pp. 401-404, 2012
Online since
November 2011
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$32.00
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