Paper Title:
Annealing of a-Si:H Thin Film by Rapid Thermal Process
  Abstract

Undoped amorphous silicon film deposited by PECVD,and annealed by rapid tharmal process,then have been studied by using micro-Raman scattering, X-ray diffraction and scanning electron microscope.It is found that crystallized silicon films is different at different annealing temperatures, there exists a better annealing temperature.

  Info
Periodical
Solid State Phenomena (Volumes 181-182)
Chapter
V. Related Materials
Edited by
Yuan Ming Huang
Pages
409-412
DOI
10.4028/www.scientific.net/SSP.181-182.409
Citation
Y. C. Wang, R. M. Jin, "Annealing of a-Si:H Thin Film by Rapid Thermal Process", Solid State Phenomena, Vols. 181-182, pp. 409-412, 2012
Online since
November 2011
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