Paper Title:
Influence of Radio Frequency Power on Microstructure of Microcrystalline Silicon Films
  Abstract

By PECVD deposition technology, we mainly investigated the influence of PRF (radio frequency power) on glass/steel-based intrinsic amorphous/microcrystalline silicon thin film prepared at 300°C. We study the crystallization ratio, grain size of the silicon thin film specially. The results reveal that the crystallization ratio and grain size of the silicon thin film changed along with RF power. The silicon thin film crystallization ratio and grain size changed sharply when PRF =70 W. On this work we think ideal μc-Si:H can be obtained at PRF= 70 W and in the suitable experimental conditions.

  Info
Periodical
Solid State Phenomena (Volumes 181-182)
Chapter
V. Related Materials
Edited by
Yuan Ming Huang
Pages
426-429
DOI
10.4028/www.scientific.net/SSP.181-182.426
Citation
S. Z. Wang, D. Zhang, Y. P. Yin, M. J. Shi, D. Y. Huang, J. H. Yu, "Influence of Radio Frequency Power on Microstructure of Microcrystalline Silicon Films", Solid State Phenomena, Vols. 181-182, pp. 426-429, 2012
Online since
November 2011
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