Electrochemical deposition of copper from copper chloride aqueous electrolyte on porous silicon (PS) substrate was investigated in the current density range of 5 mA/cm2 to 35 mA/cm2. Scanning electron microscopy (SEM) was utilized to characterize the surface morphology of as-electrodeposited PS. SEM images illustrate that the applied current density has a profound influence on the shape of copper crystal electrodeposited on the top surface of PS films. When the applied current density was fixed at 5mA/cm2, most of the copper crystals are in the shape of cube along with a small number of cuboid-shape. With the increasing current density, cuboid-shaped copper crystals gradually vanished. When the current density is up to the 35mA/cm2, we surprisingly observe that the cube shape predominates simultaneously with the emergence of truncated tetrahedron. A tentative explanation for the growth mechanism of copper crystal having various shapes is explored.