Paper Title:
Electrodeposition of Polyhedral Copper Crystals on Porous Silicon
  Abstract

Electrochemical deposition of copper from copper chloride aqueous electrolyte on porous silicon (PS) substrate was investigated in the current density range of 5 mA/cm2 to 35 mA/cm2. Scanning electron microscopy (SEM) was utilized to characterize the surface morphology of as-electrodeposited PS. SEM images illustrate that the applied current density has a profound influence on the shape of copper crystal electrodeposited on the top surface of PS films. When the applied current density was fixed at 5mA/cm2, most of the copper crystals are in the shape of cube along with a small number of cuboid-shape. With the increasing current density, cuboid-shaped copper crystals gradually vanished. When the current density is up to the 35mA/cm2, we surprisingly observe that the cube shape predominates simultaneously with the emergence of truncated tetrahedron. A tentative explanation for the growth mechanism of copper crystal having various shapes is explored.

  Info
Periodical
Solid State Phenomena (Volumes 181-182)
Chapter
V. Related Materials
Edited by
Yuan Ming Huang
Pages
434-438
DOI
10.4028/www.scientific.net/SSP.181-182.434
Citation
M. Meng, Y. M. Huang, "Electrodeposition of Polyhedral Copper Crystals on Porous Silicon", Solid State Phenomena, Vols. 181-182, pp. 434-438, 2012
Online since
November 2011
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Price
$32.00
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