Paper Title:

Study of Silicon Nanoparticles Formation in Silicon Nitride

Periodical Solid State Phenomena (Volume 186)
Main Theme Electron Microscopy XIV
Edited by Danuta Stróż and Krystian Prusik
Pages 66-69
DOI 10.4028/www.scientific.net/SSP.186.66
Citation Jacek Ratajczak et al., 2012, Solid State Phenomena, 186, 66
Online since March, 2012
Authors Jacek Ratajczak, Krzysztof Hejduk, Marek Lipiński, Tadeusz Piotrowski, Mariusz Płuska, Adam Łaszcz, Andrzej Czerwiński
Keywords CVD, Photovoltage, Quantum Dots, Silicon Nanocrystals, Silicon Nitride, TEM
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Abstract

We present results of the study on the silicon nanoparticles formation in multilayer silicon nitride structures. These structures consist of pairs of stoichiometric silicon nitride dielectric layers (SiNx) and silicon rich nitride layers (SRN). Silicon nanocrystals precipitate from the SRN layer during annealing at high temperatures (1000 oC or 1100 oC). High resolution transmission electron microscopy has been applied for investigation of the nanocrystals formation. Surface photovoltage spectroscopy technique was used for the spectral characterization of prepared structures