Wurtzite-to Amorphous-to Cubic Phase Transition of GaN1-XAsx Alloys with Increasing as Content

Walukiewicz, Wladek; Liliental-Weber, Zuzanna; dos Reis, R.; Levander, A.; Yu, Kin M.; Novikov, S.V.; Foxon, C.T.

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Home > Solid State Phenomena > Electron Microscopy XIV > Wurtzite-to Amorphous-to Cubic Phase Transition of...

Paper Title:

Wurtzite-to Amorphous-to Cubic Phase Transition of GaN_1-XAs_x Alloys with Increasing as Content

Periodical	Solid State Phenomena (Volume 186)
Main Theme	Electron Microscopy XIV
Edited by	Danuta Stróż and Krystian Prusik
Pages	74-77
DOI	10.4028/www.scientific.net/SSP.186.74
Citation	Zuzanna Liliental-Weber et al., 2012, Solid State Phenomena, 186, 74
Online since	March, 2012
Authors	Zuzanna Liliental-Weber, R. dos Reis, A. Levander, Kin M. Yu, Wladek Walukiewicz, S.V. Novikov, C.T. Foxon
Keywords	Amorphous, Bandgap, Columnar Structure, Cubic, GaNAs, Phase Transformation, Wurtzite
Price	US$ 28,-

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Abstract

This paper describes Transmission Electron Microscopy studies of the structural changes of GaN1-xAsx alloys grown by Molecular Beam Epitaxy at low temperatures on Al2O3 substrate. We found that by lowering the growth temperature increasing amount of As can be incorporated in GaN1-xAsx forming a single phase alloy. For the low As content a columnar growth of wurtzite structure is observed but for increasing As in the range of 0.170.75 the layer becomes amorphous. Increase in Ga flux at low growth temperature (about 200°C) leads to columnar alloys with As content >75% with a cubic structure. In addition to the structural changes monotonic change of the band gap is also observed with the As content in the alloy. The amorphous alloy is stable up to annealing at temperatures not higher than 600°C. Annealing at higher temperature leads to phase separation of GaAs:N and GaN:As confirmed by Z-contrast electron microscopy.