Study of Oxides Formed in HfO2/Si Structure for High-k Dielectric Applications

Czerwiński, Andrzej; Łaszcz, Adam; Ratajczak, Jacek; Taube, Andrzej; Gierałtowska, Sylwia; Piotrowska, Ania; Kątcki, Jerzy

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Home > Solid State Phenomena > Electron Microscopy XIV > Study of Oxides Formed in HfO₂/Si...

Paper Title:

Study of Oxides Formed in HfO₂/Si Structure for High-k Dielectric Applications

Periodical	Solid State Phenomena (Volume 186)
Main Theme	Electron Microscopy XIV
Edited by	Danuta Stróż and Krystian Prusik
Pages	78-81
DOI	10.4028/www.scientific.net/SSP.186.78
Citation	Adam Łaszcz et al., 2012, Solid State Phenomena, 186, 78
Online since	March, 2012
Authors	Adam Łaszcz, Andrzej Czerwiński, Jacek Ratajczak, Andrzej Taube, Sylwia Gierałtowska, Ania Piotrowska, Jerzy Kątcki
Keywords	Energy Dispersive X-Ray Spectroscopy Examination, Hafnium Oxide, High-k Dielectric Materials, Transmission Electron Microscopy Observation
Price	US$ 28,-

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Abstract

Transmission electron microscopy (TEM) techniques were used for characterization of annealing (400, 600 and 800 ºC) influence on the structural properties of the HfO₂ film (45 nm thick) deposited on Si substrate. Such structures are considered as high-k dielectric materials for application in novel semiconductor devices. The studies showed that independently of the annealing temperature a very thin and flat amorphous layer is formed between HfO₂ layer and Si substrate. This result was also found in the non-annealed sample. EDXS examination confirmed that the stoichiometry for the hafnium oxide layer in each sample corresponds to 1:2 for Hf:O (i.e. to HfO₂). TEM images revealed differences in the microstructure of HfO₂ layers in annealed samples, however the layers have similar thickness and interface roughness in all studied samples.