Ultra Clean Processing of Semiconductor Surfaces X
| Paper Title | Page |
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Preface, Committees and Sponsors
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Exploratory Materials and Devices to Advance CMOS beyond the Classical Si Roadmap Authors: Marc M. Heyns |
3 |
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Authors: W. Melitz, J.B. Clemens, J. Shen, E.A. Chagarov, S. Lee, J.S. Lee, J.E. Royer, M. Holland, S. Bentley, D. McIntyre, I. Thayne, R. Droopad, A.C. Kummel |
9 |
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Authors: Roger Loo, Laurent Souriau, Patrick Ong, Karine Kenis, Jens Rip |
15 |
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Cleaning and Surface Preparation for SiGe and Ge Channel Device Authors: Masayuki Wada, H. Takahashi, James Snow, Rita Vos, Thierry Conard, Paul W. Mertens, H. Shirakawa |
19 |
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S-Passivation of the Ge Gate Stack Using (NH4)2S Authors: Sonja Sioncke, Claudia Fleischmann, Dennis Lin, Evi Vrancken, Matty Caymax, Marc Meuris, Kristiaan Temst, André Vantomme, Matthias Müller, Michael Kolbe, Burkhard Beckhoff |
23 |
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Wet Chemical Cleaning of InP and InGaAs Authors: Rita Vos, Sophia Arnauts, Thierry Conard, Alain Moussa, Herbert Struyf, Paul W. Mertens |
27 |
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Achieving Ultra-Shallow Junctions in Future CMOS Devices by a Wet Processing Technique Authors: Joel Barnett, Richard Hill, Prashant Majhi |
33 |
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Effect of Wet Cleanings on GST Surface: XPS Characterization Authors: Annamaria Votta, Francesco Pipia, Enrica Ravizza, Simona Spadoni, Silvia Rossini, Lucilla Brattico, Mauro Alessandri |
37 |
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Study of the Etching Mechanism of Heavily Doped Si in HF Authors: Nick Valckx, Daniel Cuypers, Rita Vos, Harold Philipsen, Jens Rip, Geert Doumen, Paul W. Mertens, Marc M. Heyns, Stefan de Gendt |
41 |
