Paper Title:
Characterization of Low-k Dielectric Etch Residue on the Sidewall by Chemical Force Microscope
| Periodical | Solid State Phenomena (Volume 187) |
|---|---|
| Main Theme | Ultra Clean Processing of Semiconductor Surfaces X |
| Edited by | Paul Mertens, Marc Meuris and Marc Heyns |
| Pages | 197-200 |
| DOI | 10.4028/www.scientific.net/SSP.187.197 |
| Citation | Tae Gon Kim et al., 2012, Solid State Phenomena, 187, 197 |
| Online since | April, 2012 |
| Authors | Tae Gon Kim, Quoc Toan Le, Samuel Suhard, Marcel Lux, Guy Vereecke, Martine Claes, Herbert Struyf, Stefan de Gendt, Paul W. Mertens, Marc M. Heyns |
| Keywords | Chemical Force Microscope, Low-k, Post-Etch Residue Cleaning, Sidewall Metrology |
| Price | US$ 28,- |
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Abstract
Atomic force microscope (AFM) with inclined sample measurement and hydrophobic functionalized AFM probe was used to visualize the sidewall of low-k pattern and allowed to characterize the hydrophobic characteristics on the sidewall after low-k etch. To functionalized the AFM probe, 1H,1H,2H,2H-Perfluorodecyltrichlorosilane (FDTS) as a hydrophobic film was coated on an AFM probe. Because of the magnitude of the phobic-phobic interaction force and the tip forced to make a phase shift. Using this technique the visualization and characterization of the etch residue on the low-k sidewall can be successfully performed. It is shown that the investigation toward an effective chemical clean for the etch residue removal could be applicable.
