Paper Title:
Wet Chemical Cleaning of InP and InGaAs
| Periodical | Solid State Phenomena (Volume 187) |
|---|---|
| Main Theme | Ultra Clean Processing of Semiconductor Surfaces X |
| Edited by | Paul Mertens, Marc Meuris and Marc Heyns |
| Pages | 27-31 |
| DOI | 10.4028/www.scientific.net/SSP.187.27 |
| Citation | Rita Vos et al., 2012, Solid State Phenomena, 187, 27 |
| Online since | April, 2012 |
| Authors | Rita Vos, Sophia Arnauts, Thierry Conard, Alain Moussa, Herbert Struyf, Paul W. Mertens |
| Keywords | Etching, III-V Substrate, InGaAs, InP, Passivation |
| Price | US$ 28,- |
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Abstract
n this work, the compatibility of InP and InGaAs in cleaning solutions commonly used in semiconductor manufacturing is investigated. Aqueous oxidizing cleans should be avoided as the substrates dissolve rapidly. Low pH solutions may impose some serious ES&H issues due to hydride evolution occurring upon acidic hydrolysis of the III-V material. However, acidic solutions are very efficient to remove the native oxide from the substrate. Complete oxide free surfaces are not achieved after wet cleaning due to the rapid oxidation of these materials in the atmosphere.
