Paper Title:
A Hybrid Dry-Wet Approach for Removal of a Dummy Polysilicon Gate in a Replacement Metal Gate Scheme
| Periodical | Solid State Phenomena (Volume 187) |
|---|---|
| Main Theme | Ultra Clean Processing of Semiconductor Surfaces X |
| Edited by | Paul Mertens, Marc Meuris and Marc Heyns |
| Pages | 57-60 |
| DOI | 10.4028/www.scientific.net/SSP.187.57 |
| Citation | Guang Yaw Hwang et al., 2012, Solid State Phenomena, 187, 57 |
| Online since | April, 2012 |
| Authors | Guang Yaw Hwang, J.H. Liao, S.F. Tzou, Mark Lin, Autumn Yeh, David Lou, Eason Chen, Weien Huang, Gowri Kamarthy, Kai Dong Xu, Amulya Athayde |
| Keywords | Dummy Poly Removal, HKMG, Plasma Etch, Replacement Gate, Wet Etch |
| Price | US$ 28,- |
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Abstract
Beginning at the 45nm node, the semiconductor industry is moving to high-k gate dielectrics and metal gate electrodes for CMOS logic devices [. Although different approaches of building these devices are being pursued, most of the industry has consolidated behind a gate last approach, in which the transistor is built around a dummy poly polysilicon gate, which is subsequently removed and replaced with a metal gate. Current approaches to removing the dummy poly gate include plasma-based dry processes and liquid-phase wet etching.
