Paper Title:
Surface Charging Induced Gate Oxide Degradation
| Periodical | Solid State Phenomena (Volume 187) |
|---|---|
| Main Theme | Ultra Clean Processing of Semiconductor Surfaces X |
| Edited by | Paul Mertens, Marc Meuris and Marc Heyns |
| Pages | 67-70 |
| DOI | 10.4028/www.scientific.net/SSP.187.67 |
| Citation | Chun Ling Chiang et al., 2012, Solid State Phenomena, 187, 67 |
| Online since | April, 2012 |
| Authors | Chun Ling Chiang, C.M. Cheng, J.Y. Hsieh, J.H. Liao, L.W. Yang, T.H. Yang, K.C. Chen, Chih Yuan Lu |
| Keywords | Gate Oxide Degradation, Spinning Dry, Surface Charging |
| Price | US$ 28,- |
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Abstract
In dual gate process, wet strip is an important procedure to remove the photoresist. Two wet strip methods of spinning-dry and batch type were evaluated in this study. Several methods were applied to measure the surface charging density [1, 2]. The Quantox system has been well known as an inline tester with noncontact measurement such as surface voltage, surface photo voltage (SPV), flatband voltage, surface barrier high, minority carrier diffusion length, recombination life time, generation life time, and et. al [3-6]. It is an useful in-line monitor equipment for oxide quality evaluation.
