Paper Title:
Scanning Probe Microscopy Imaging before and after Atomic Layer Oxide Deposition on a Compound Semiconductor Surface
| Periodical | Solid State Phenomena (Volume 187) |
|---|---|
| Main Theme | Ultra Clean Processing of Semiconductor Surfaces X |
| Edited by | Paul Mertens, Marc Meuris and Marc Heyns |
| Pages | 9-10 |
| DOI | 10.4028/www.scientific.net/SSP.187.9 |
| Citation | W. Melitz et al., 2012, Solid State Phenomena, 187, 9 |
| Online since | April, 2012 |
| Authors | W. Melitz, J.B. Clemens, J. Shen, E.A. Chagarov, S. Lee, J.S. Lee, J.E. Royer, M. Holland, S. Bentley, D. McIntyre, I. Thayne, R. Droopad, A.C. Kummel |
| Keywords | ALD, Compound Semiconductor, InGaAs, KPFM, Scanning Probe Microsocopy, STM, STS |
| Price | US$ 28,- |
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Abstract
The megasonic cleaning efficiency is evaluated as a function of the angle of incidence of acoustic waves on a Si wafer. Acoustic Schlichting streaming alone is not able to remove nanoparticles smaller than 400 nm. It is shown that oscillating or collapsing behavior of bubbles are responsible for removing nanoparticles smaller than 400 nm during a cleaning process with ultrasound. Optimal particle removal efficiency is obtained around the angle of acoustic transmission of the silicon wafer.
