HOME CONTACT

Username: Password:

> @scientific.net

Gettering and Defect Engineering in Semiconductor Technology

Solid State Phenomena Volumes 19 - 20

• Papers
• Abstracts

• p1 Intrinsic/Internal Gettering in Czochralski Silicon Wafers   [ 611 K ]
  Authors: F. Shimura
• p13 Defects and impurities in Multi Layer Structures on Si: The Role of Mechanical Stresses in Gettering of Defects and Impurities by Intrinsic and Extrinsic Grain Boundaries   [ 542 K ]
• p27 Precipitation of Iron in Silicon: Gettering to Extended Surface Defects Sites   [ 484 K ]
  Authors: M.D. de Coteau, Peter R. Wilshaw, Robert J. Falster
• p33 Gettering of Copper and Nickel in Czochralski Silicon by Oxide Particles: Assessment of Thermal Stability   [ 690 K ]
  Authors: Robert J. Falster, Z. Laczik, G.R. Booker, Péter Török
• p39 Gettering of Copper and Nickel in Czochralski Silicon by Oxide Particles: Dependence on Oxide Particle Density and Cooling Rate   [ 336 K ]
  Authors: Z. Laczik, Robert J. Falster, G.R. Booker
• p45 On the Role of Stacking Faults in Copper Precipitation in Silicon   [ 422 K ]
  Authors: Michael Seibt
• p51 TEM Studies of the Gettering of Copper, Palladium and Nickel in Czochralski Silicon by Small Oxide Particles   [ 665 K ]
  Authors: A.R. Bhatti, Robert J. Falster, G.R. Booker
• p57 An Influence of Carbon on Intrinsic Gettering Quality and Circuit Performance   [ 317 K ]
  Authors: L. Tesar, J. Fojtásaek, J. Kadanka, Josef Bartoš
• p65 Intrinsic Gettering in Nitrogen-Doped Cz-Si   [ 103 K ]
  Authors: J.S. Yang, L.B. Li, Duan Lin Que
• p69 Application of Doped Polysilicon Layers in a BICMOS-Technology   [ 398 K ]
  Authors: G. Ritter, H.B. Erzgräber, D. Bolze
• p79 Self-Interstitial Atoms and Structure of Intrinsic Getter in Silicon Crystals   [ 359 K ]
  Authors: Liudmila I. Fedina, S.G. Denisenko, A.L. Aseev
• p85 Internal Gettering Effectiveness for Transition Metals /Fe,Ni/ in Cz-SI   [ 47 K ]
  Authors: U. Woijciechowski
• p87 Intrinsic Gettering of Radiation Defects in Silicon Caused by High-Temperature Oxygen-Containing Defects   [ 167 K ]
  Authors: V.B. Neimash, T.R. Sagan, V.M. Tsmots, V.M. Siratskii, V.I. Shakhovtsov, V.L. Shindich
• p95 Defect Engineering in Submicron CMOS Technologies   [ 1 M ]
  Authors: C. Claeys, Jan Vanhellemont, Eddy Simoen
• p109 Contamination Control in Si ULSI-Technology at the 10¹¹cm^-3 - Level and below   [ 497 K ]
  Authors: Werner Bergholz, G. Zoth, G. Götz, A. Saliov