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Contamination Control in Si ULSI-Technology at the 1011cm-3 - Level and below

Journal Solid State Phenomena (Volumes 19 - 20)
Volume Gettering and Defect Engineering in Semiconductor Technology
Edited by M. Kittler and H. Richter
Pages 109-120
DOI 10.4028/www.scientific.net/SSP.19-20.109
Citation Werner Bergholz et al., 1991, Solid State Phenomena, 19-20, 109
Authors Werner Bergholz, G. Zoth, G. Götz, A. Saliov
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