Simulation of Hydrogen Diffusion in n and p Type Silicon: Determination of Kinetic and Thermodynamic Parameters |
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| Journal | Solid State Phenomena (Volumes 19 - 20) |
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| Volume | Gettering and Defect Engineering in Semiconductor Technology |
| Edited by | M. Kittler and H. Richter |
| Pages | 253-258 |
| DOI | 10.4028/www.scientific.net/SSP.19-20.253 |
| Citation | D. Ballutaud et al., 1991, Solid State Phenomena, 19-20, 253 |
| Authors | D. Ballutaud, R. Rizk, P. de Mierry |
| Full Paper | 
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