Hydrogen Passivation of Grain Boundaries in Polysilicon: Computer Simulation |
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| Journal | Solid State Phenomena (Volumes 19 - 20) |
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| Volume | Gettering and Defect Engineering in Semiconductor Technology |
| Edited by | M. Kittler and H. Richter |
| Pages | 259-264 |
| DOI | 10.4028/www.scientific.net/SSP.19-20.259 |
| Citation | L.E. Polyak et al., 1991, Solid State Phenomena, 19-20, 259 |
| Authors | L.E. Polyak, E.A. Katz |
| Full Paper | 
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