Modification of the Properties of Si Crystals Exposed to Atomic Hydrogen at High Temperatures |
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| Journal | Solid State Phenomena (Volumes 19 - 20) |
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| Volume | Gettering and Defect Engineering in Semiconductor Technology |
| Edited by | M. Kittler and H. Richter |
| Pages | 265-270 |
| DOI | 10.4028/www.scientific.net/SSP.19-20.265 |
| Citation | Sergei V. Koveshnikov et al., 1991, Solid State Phenomena, 19-20, 265 |
| Authors | Sergei V. Koveshnikov, S.V. Nosenko, A.M. Surma |
| Full Paper | 
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