Paper Title:
Simulation of Point-Defect Assisted Diffusion of Boron in RTA-Treated Silicon Wafers
  Abstract

  Info
Periodical
Solid State Phenomena (Volumes 19-20)
Edited by
M. Kittler and H. Richter
Pages
271-276
DOI
10.4028/www.scientific.net/SSP.19-20.271
Citation
H. Gdanitz, G. Ritter, "Simulation of Point-Defect Assisted Diffusion of Boron in RTA-Treated Silicon Wafers", Solid State Phenomena, Vols. 19-20, pp. 271-276, 1991
Online since
January 1991
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Price
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