Simulation of Point-Defect Assisted Diffusion of Boron in RTA-Treated Silicon Wafers |
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| Journal | Solid State Phenomena (Volumes 19 - 20) |
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| Volume | Gettering and Defect Engineering in Semiconductor Technology |
| Edited by | M. Kittler and H. Richter |
| Pages | 271-276 |
| DOI | 10.4028/www.scientific.net/SSP.19-20.271 |
| Citation | H. Gdanitz et al., 1991, Solid State Phenomena, 19-20, 271 |
| Authors | H. Gdanitz, G. Ritter |
| Full Paper | 
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