Dopant Deactivation and Electrically Active Defects Induced in Silicon by CF4 and CBrF3 Plasma Etching |
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| Journal | Solid State Phenomena (Volumes 19 - 20) |
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| Volume | Gettering and Defect Engineering in Semiconductor Technology |
| Edited by | M. Kittler and H. Richter |
| Pages | 277-282 |
| DOI | 10.4028/www.scientific.net/SSP.19-20.277 |
| Citation | Yu.P. Baryshev et al., 1991, Solid State Phenomena, 19-20, 277 |
| Authors | Yu.P. Baryshev, A.A. Orlikovsky, K.A. Valiev, M.N. Zolotukhin |
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