Origin of Recombination at Extended Defects: EBIC Contrast Experiments and Theory on Dislocations in GaAs |
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| Journal | Solid State Phenomena (Volumes 19 - 20) |
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| Volume | Gettering and Defect Engineering in Semiconductor Technology |
| Edited by | M. Kittler and H. Richter |
| Pages | 353-366 |
| DOI | 10.4028/www.scientific.net/SSP.19-20.353 |
| Citation | B. Sieber, 1991, Solid State Phenomena, 19-20, 353 |
| Authors | B. Sieber |
| Full Paper | 
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