Paper Title:
Origin of Recombination at Extended Defects: EBIC Contrast Experiments and Theory on Dislocations in GaAs
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Periodical
Solid State Phenomena (Volumes 19-20)
Edited by
M. Kittler and H. Richter
Pages
353-366
DOI
10.4028/www.scientific.net/SSP.19-20.353
Citation
B. Sieber, "Origin of Recombination at Extended Defects: EBIC Contrast Experiments and Theory on Dislocations in GaAs", Solid State Phenomena, Vols. 19-20, pp. 353-366, 1991
Online since
January 1991
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