Electrical Properties of Dislocation Impurity Atmospheres in Si |
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| Journal | Solid State Phenomena (Volumes 19 - 20) |
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| Volume | Gettering and Defect Engineering in Semiconductor Technology |
| Edited by | M. Kittler and H. Richter |
| Pages | 367-372 |
| DOI | 10.4028/www.scientific.net/SSP.19-20.367 |
| Citation | Eugene B. Yakimov et al., 1991, Solid State Phenomena, 19-20, 367 |
| Authors | Eugene B. Yakimov, Nikolai Yarykin, Sergei V. Koveshnikov |
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