Gettering of Copper and Nickel in Czochralski Silicon by Oxide Particles: Dependence on Oxide Particle Density and Cooling Rate |
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| Journal | Solid State Phenomena (Volumes 19 - 20) |
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| Volume | Gettering and Defect Engineering in Semiconductor Technology |
| Edited by | M. Kittler and H. Richter |
| Pages | 39-44 |
| DOI | 10.4028/www.scientific.net/SSP.19-20.39 |
| Citation | Z. Laczik et al., 1991, Solid State Phenomena, 19-20, 39 |
| Authors | Z. Laczik, Robert J. Falster, G.R. Booker |
| Full Paper | 
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