Application of Doped Polysilicon Layers in a BICMOS-Technology |
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| Journal | Solid State Phenomena (Volumes 19 - 20) |
|---|---|
| Volume | Gettering and Defect Engineering in Semiconductor Technology |
| Edited by | M. Kittler and H. Richter |
| Pages | 69-78 |
| DOI | 10.4028/www.scientific.net/SSP.19-20.69 |
| Citation | G. Ritter et al., 1991, Solid State Phenomena, 19-20, 69 |
| Authors | G. Ritter, H.B. Erzgräber, D. Bolze |
| Full Paper | 
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