Paper Title:
Intrinsic Gettering of Radiation Defects in Silicon Caused by High-Temperature Oxygen-Containing Defects
  Abstract

  Info
Periodical
Solid State Phenomena (Volumes 19-20)
Edited by
M. Kittler and H. Richter
Pages
87-94
DOI
10.4028/www.scientific.net/SSP.19-20.87
Citation
V.B. Neimash, T.R. Sagan, V.M. Tsmots, V.M. Siratskii, V.I. Shakhovtsov, V.L. Shindich, "Intrinsic Gettering of Radiation Defects in Silicon Caused by High-Temperature Oxygen-Containing Defects", Solid State Phenomena, Vols. 19-20, pp. 87-94, 1991
Online since
January 1991
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Price
$32.00
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