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Gettering and Defect Engineering in Semiconductor Technology

Solid State Phenomena Volumes 19 - 20

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• p587 Nature of Defects in MOCVD Grown GaAlAs-GaAs QW DHs   [ 394 K ]
  Authors: B.S. Yavich, I.N. Kochnev, P.P. Buinov, N.I. Katzavetz, T.S. Argunova, G.N. Mosina, S.S. Ruvimov
• p593 XPS Sputter Depth Profiling Applid to the Analysis of Si/SiO₂, Si/SiO_xN_y and Si/Si₃N₄   [ 256 K ]
  Authors: O. Benkherourou, J.P. Deville
• p599 Electrical Stability of Thin Nitroxide Layers on Silicon after RTO/RTN/RTO-Treatment   [ 211 K ]
  Authors: G. Weidner, G. Prösch, A. Beyer, M. Wolf, V. Rank, M. Kopp
• p605 Germanium and Antimony Epitaxy with Large Lattice Misfit   [ 248 K ]
  Authors: H.J. Osten, Jeffrey Klatt, G. Lippert
• p611 TEM Investigations on the Structure and Stability of Diffusion Barriers for VLSI Contacts   [ 751 K ]
  Authors: S. Hopfe, Manfred Reiche
• p617 Defect Characterization of Thick SOI-Layers and Eptaxial Grown Layers on SOI Substrates   [ 573 K ]
  Authors: K. Höppner, Bernd Tillack, R. Banisch, H.H. Richter, O. Joachim
• p625 SOI by Silicon Wafer Direct Bonding - Problems of Wafer Warpage and Surface Chemistry   [ 232 K ]
  Authors: G. Kissinger, W. Kissinger, H. Hofmann, Joachim Krüger
• p631 Temperature Profiles Induced by Recrystallization of Silicon-on-Insulator with Scanning Incoherent Light Line Source   [ 220 K ]
  Authors: H.H. Richter, H. Andrä, Bernd Tillack, O. Joachim, W. Weinelt, R. Banisch, K. Hoeppner
• p639 Zinc and Zinc-Impurity Pairs in Silicon   [ 428 K ]
  Authors: C.A.J. Ammerlaan, H.E. Altink