Paper Title:
In Situ Studies of III-V Surfaces and High-K Atomic Layer Deposition
  Abstract

Atomic layer deposition (ALD) of high dielectric constant (high-k) materials for ULSI technologies is now widely adopted in Si-based CMOS production. Extending the scaling of integrated circuit technology has now resulted in the investigation of transistors incorporating alternative channel materials, such as III-V compounds. The control of the interfacial chemistry between a high-k dielectric and III-V materials presents a formidable challenge compared to that surmounted by Si-based technologies. The bonding configuration is obviously more complicated for a compound semiconductor, and thus an enhanced propensity to form interfacial defects is anticipated, as well as the need for surface passivation methods to mitigate such defects. In this work, we outline our recent results using in-situ methods to study the ALD high-k/III-V interface. We begin by briefly summarizing our results for III-As compounds, and then further discuss recent work on III-P and III-Sb compounds. While arsenides are under consideration for nMOS devices, antimonides are of interest for pMOS. InP is under consideration for quantum well channel MOS structures in order to serve as a better nMOS channel interface. In all cases, a high-k dielectric interface is employed to limit off-state tunneling current leakage.

  Info
Periodical
Solid State Phenomena (Volume 195)
Chapter
Chapter 3: Surface Chemistry and Functionalisation
Edited by
Paul Mertens, Marc Meuris and Marc Heyns
Pages
90-94
DOI
10.4028/www.scientific.net/SSP.195.90
Citation
B. Brennan, S. McDonnell, D. Zhernokletov, H. Dong, C.L. Hinkle, J. Kim, R.M. Wallace, "In Situ Studies of III-V Surfaces and High-K Atomic Layer Deposition", Solid State Phenomena, Vol. 195, pp. 90-94, 2013
Online since
December 2012
Keywords
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Alessio Beverina, M.M. Frank, H. Shang, S. Rivillon, F. Amy, C.L. Hsueh, V.K. Paruchuri, R.T. Mo, M. Copel, E.P. Gusev, M.A. Gribelyuk, Y.J. Chabal
Abstract:We review the impact of semiconductor surface preparation on the performance of metal-oxidesemiconductor field-effect transistor (MOSFET)...
3
Authors: K.H. Baik, Seung Joon Ahn, Chul Geun Park, Seung Young Lee, Seung Joon Ahn
Abstract:We investigated the characteristics of the HfO2 layer deposited by ALD method in MOSFET devices where the HfO2 film is incorporated as the...
190
Authors: Carey M. Tanner, Jun Lu, Hans Olof Blom, Jane P. Chang
Abstract:The material properties of HfO2 thin films were studied to evaluate their potential as a high-κ gate dielectric in 4H-SiC power...
1075
Authors: W. Melitz, J.B. Clemens, J. Shen, E.A. Chagarov, S. Lee, J.S. Lee, J.E. Royer, M. Holland, S. Bentley, D. McIntyre, I. Thayne, R. Droopad, A.C. Kummel
Chapter 1: FEOL Surface Chemistry, Etching and Passivation
Abstract:The megasonic cleaning efficiency is evaluated as a function of the angle of incidence of acoustic waves on a Si wafer. Acoustic Schlichting...
9
Authors: Ming Kwei Lee, Chih Feng Yen, Sheng Hsiung Yang, Jung Chan Lee, Chi Hsuan Cheng, Wei Hau Cheng
Chapter 10: Power Electronics and Power Drives
Abstract:The (NH4)2 S treatment was used for the reduction of native oxides and passivation on GaAs. Atomic layer deposited...
1945