Paper Title:
Reduction of Interfacial Carbon and Boron Contamination as Sources for Degradation of Epitaxial SiGe Layers Grown by MBE
  Abstract

  Info
Periodical
Solid State Phenomena (Volumes 32-33)
Edited by
H.G. Grimmeiss, M. Kittler and H. Richter
Pages
117-122
DOI
10.4028/www.scientific.net/SSP.32-33.117
Citation
H.P. Zeindl, G. Lippert, J. Drews, R. Kurps, H.J. Osten, "Reduction of Interfacial Carbon and Boron Contamination as Sources for Degradation of Epitaxial SiGe Layers Grown by MBE ", Solid State Phenomena, Vols. 32-33, pp. 117-122, 1993
Online since
December 1993
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