Paper Title:
Effect of Oxygen Concentration on the Kinetics of Oxygen Loss and Thermal Donor Formation in Silicon at Temperatures between 350° C and 500° C
  Abstract

  Info
Periodical
Solid State Phenomena (Volumes 32-33)
Edited by
H.G. Grimmeiss, M. Kittler and H. Richter
Pages
161-166
DOI
10.4028/www.scientific.net/SSP.32-33.161
Citation
C. A. Londos, S.A. McQuaid, M.J. Binns, R.C. Newman, J.H. Tucker, "Effect of Oxygen Concentration on the Kinetics of Oxygen Loss and Thermal Donor Formation in Silicon at Temperatures between 350° C and 500° C", Solid State Phenomena, Vols. 32-33, pp. 161-166, 1993
Online since
December 1993
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