Paper Title:
The Role of Oxygen for Defect Formation in Oxygen-Rich Si- and Si1-xGex - Layers on Silicon Grown by APCVD
  Abstract

  Info
Periodical
Solid State Phenomena (Volumes 32-33)
Edited by
H.G. Grimmeiss, M. Kittler and H. Richter
Pages
197-202
DOI
10.4028/www.scientific.net/SSP.32-33.197
Citation
D. Krüger, T. Morgenstern, R. Kurps, C. Quick, "The Role of Oxygen for Defect Formation in Oxygen-Rich Si- and Si1-xGex - Layers on Silicon Grown by APCVD", Solid State Phenomena, Vols. 32-33, pp. 197-202, 1993
Online since
December 1993
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Price
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