Paper Title:
Lattice Defects Induced in Si1-xGex Diodes by 1-MeV Electron Irradiation and their Influence on Electrical Characteristics
  Abstract

  Info
Periodical
Solid State Phenomena (Volumes 32-33)
Edited by
H.G. Grimmeiss, M. Kittler and H. Richter
Pages
247-252
DOI
10.4028/www.scientific.net/SSP.32-33.247
Citation
H. Ohyama, J. Vanhellemont, J. Poortmans, M. Caymax, P. Clauws, "Lattice Defects Induced in Si1-xGex Diodes by 1-MeV Electron Irradiation and their Influence on Electrical Characteristics", Solid State Phenomena, Vols. 32-33, pp. 247-252, 1993
Online since
December 1993
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.