Lattice Defects Induced in Si1-xGex Diodes by 1-MeV Electron Irradiation and their Influence on Electrical Characteristics |
| Journal |
Solid State Phenomena (Volumes 32 - 33) |
| Volume |
Gettering and Defect Engineering in Semiconductor Technology |
| Edited by |
H.G. Grimmeiss, M. Kittler and H. Richter |
| Pages |
247-252 |
| DOI |
10.4028/www.scientific.net/SSP.32-33.247 |
| Citation |
H. Ohyama et al., 1993, Solid State Phenomena, 32-33, 247 |
| Online since |
December, 1993 |
| Authors |
H. Ohyama, Jan Vanhellemont, Jef Poortmans, Matty Caymax, Paul Clauws |
| Full Paper |
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