Dopant Migration Caused by Point Defect Gradients |
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| Journal | Solid State Phenomena (Volumes 32 - 33) |
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| Volume | Gettering and Defect Engineering in Semiconductor Technology |
| Edited by | H.G. Grimmeiss, M. Kittler and H. Richter |
| Pages | 259-268 |
| DOI | 10.4028/www.scientific.net/SSP.32-33.259 |
| Citation | P. Pichler et al., 1993, Solid State Phenomena, 32-33, 259 |
| Online since | December, 1993 |
| Authors | P. Pichler, S. List |
| Full Paper | 
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