Vacancy Assisted Diffusion of Si in GaAs: Microscopic Theory |
|
| Journal | Solid State Phenomena (Volumes 32 - 33) |
|---|---|
| Volume | Gettering and Defect Engineering in Semiconductor Technology |
| Edited by | H.G. Grimmeiss, M. Kittler and H. Richter |
| Pages | 269-272 |
| DOI | 10.4028/www.scientific.net/SSP.32-33.269 |
| Citation | Jaroslaw Dąbrowski et al., 1993, Solid State Phenomena, 32-33, 269 |
| Online since | December, 1993 |
| Authors | Jaroslaw Dąbrowski, J. Northrup |
| Full Paper | 
Get the full paper by clicking here
|
First page example
