Generation of the P-Induced Misfit Dislocations during the Diffusion in Silicon: Analytical Determination of the Criticy Conditions |
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| Journal | Solid State Phenomena (Volumes 32 - 33) |
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| Volume | Gettering and Defect Engineering in Semiconductor Technology |
| Edited by | H.G. Grimmeiss, M. Kittler and H. Richter |
| Pages | 93-98 |
| DOI | 10.4028/www.scientific.net/SSP.32-33.93 |
| Citation | F. Gaiseanu et al., 1993, Solid State Phenomena, 32-33, 93 |
| Online since | December, 1993 |
| Authors | F. Gaiseanu, R. Plugaru, M. Bazu, O. Buiu |
| Full Paper | 
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