Main Theme:
Polycrystalline Semiconductors III
Volumes 37 - 38
doi:
10.4028/www.scientific.net/SSP.37-38
Paper Titles published in this Main Theme:
| Paper Title |
Page |
|
The Electrical Activity of Dislocations in Edge-Defined Film-Fed Growth Silicon
Authors: W.D. Sawyer, R.O. Bell, Andreas Schönecker
|
3
|
|
Correlation of Structural and Electronic Properties from Dislocations in Semiconductors
Authors: Joerg Weber
|
13
|
|
How Can Dislocations Enhance the Efficiency of Photovoltaic Solar Cells?
Authors: H.F. Mataré
|
25
|
|
About the Electrical Conductivity of Dislocations in Multicrystalline Silicon Solar Cells
Authors: H. El Ghitani, Marcel Pasquinelli, J.J. Simon, Santo Martinuzzi
|
31
|
|
g-Tensors of Electrons Bound to 60°-Dislocations in Ge and Si
Authors: Y.T. Rebane, Y.G. Shreter
|
35
|
|
Formation of Misfit Dislocation Networks in Ge/Si as Dependent on the Substrate Orientation
Authors: M. Albrecht, S. Christiansen, P.O. Hansson, Horst P. Strunk, E. Bauser
|
41
|
|
In Situ Observations of Dislocation Motion in Polycrystalline Silicon during Straining Experiment in a High-Voltage Electron Microscope
Authors: M. Werner, Martin Bartsch, U. Messerschmidt, D. Baither
|
47
|
|
Theoretical Study of the Atomic and Electronic Structures of Grain Boundaries in Semiconductors
Authors: Masanori Kohyama, Ryoichi Yamamoto
|
55
|
|
Structure of Grain Boundaries in Polycrystalline Semiconductors
Authors: S. McKernan, C.B. Carter
|
67
|
|
High Temperature Atomic Simulations of Grain Boundaries in Semiconductors Using a New Type of Periodic Boundary Conditions
Authors: O.B.M. Hardouin Duparc
|
75
|
Showing 1 to 10 of 84 Paper Titles