Solid State Phenomena

Paper Title	Page
The Electrical Activity of Dislocations in Edge-Defined Film-Fed Growth Silicon Authors: W.D. Sawyer, R.O. Bell, Andreas Schönecker	3
Correlation of Structural and Electronic Properties from Dislocations in Semiconductors Authors: Joerg Weber	13
How Can Dislocations Enhance the Efficiency of Photovoltaic Solar Cells? Authors: H.F. Mataré	25
About the Electrical Conductivity of Dislocations in Multicrystalline Silicon Solar Cells Authors: H. El Ghitani, Marcel Pasquinelli, J.J. Simon, Santo Martinuzzi	31
g-Tensors of Electrons Bound to 60°-Dislocations in Ge and Si Authors: Y.T. Rebane, Y.G. Shreter	35
Formation of Misfit Dislocation Networks in Ge/Si as Dependent on the Substrate Orientation Authors: M. Albrecht, S. Christiansen, P.O. Hansson, Horst P. Strunk, E. Bauser	41
In Situ Observations of Dislocation Motion in Polycrystalline Silicon during Straining Experiment in a High-Voltage Electron Microscope Authors: M. Werner, Martin Bartsch, U. Messerschmidt, D. Baither	47
Theoretical Study of the Atomic and Electronic Structures of Grain Boundaries in Semiconductors Authors: Masanori Kohyama, Ryoichi Yamamoto	55
Structure of Grain Boundaries in Polycrystalline Semiconductors Authors: S. McKernan, C.B. Carter	67
High Temperature Atomic Simulations of Grain Boundaries in Semiconductors Using a New Type of Periodic Boundary Conditions Authors: O.B.M. Hardouin Duparc	75

Paper Title

Page

The Electrical Activity of Dislocations in Edge-Defined Film-Fed Growth Silicon

Authors: W.D. Sawyer, R.O. Bell, Andreas Schönecker

Correlation of Structural and Electronic Properties from Dislocations in Semiconductors

Authors: Joerg Weber

How Can Dislocations Enhance the Efficiency of Photovoltaic Solar Cells?

Authors: H.F. Mataré

About the Electrical Conductivity of Dislocations in Multicrystalline Silicon Solar Cells

Authors: H. El Ghitani, Marcel Pasquinelli, J.J. Simon, Santo Martinuzzi

g-Tensors of Electrons Bound to 60°-Dislocations in Ge and Si

Authors: Y.T. Rebane, Y.G. Shreter

Formation of Misfit Dislocation Networks in Ge/Si as Dependent on the Substrate Orientation

Authors: M. Albrecht, S. Christiansen, P.O. Hansson, Horst P. Strunk, E. Bauser

In Situ Observations of Dislocation Motion in Polycrystalline Silicon during Straining Experiment in a High-Voltage Electron Microscope

Authors: M. Werner, Martin Bartsch, U. Messerschmidt, D. Baither

Theoretical Study of the Atomic and Electronic Structures of Grain Boundaries in Semiconductors

Authors: Masanori Kohyama, Ryoichi Yamamoto

Structure of Grain Boundaries in Polycrystalline Semiconductors

Authors: S. McKernan, C.B. Carter

High Temperature Atomic Simulations of Grain Boundaries in Semiconductors Using a New Type of Periodic Boundary Conditions

Authors: O.B.M. Hardouin Duparc

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Polycrystalline Semiconductors III