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Polycrystalline Semiconductors III

Solid State Phenomena Volumes 37 - 38

• Papers
• Abstracts

• p3 The Electrical Activity of Dislocations in Edge-Defined Film-Fed Growth Silicon   [ 546 K ]
  Authors: W.D. Sawyer, R.O. Bell, Andreas Schönecker
• p13 Correlation of Structural and Electronic Properties from Dislocations in Semiconductors   [ 628 K ]
  Authors: Joerg Weber
• p25 How Can Dislocations Enhance the Efficiency of Photovoltaic Solar Cells?   [ 256 K ]
  Authors: H.F. Mataré
• p31 About the Electrical Conductivity of Dislocations in Multicrystalline Silicon Solar Cells   [ 162 K ]
  Authors: H. El Ghitani, Marcel Pasquinelli, J.J. Simon, Santo Martinuzzi
• p35 g-Tensors of Electrons Bound to 60°-Dislocations in Ge and Si   [ 256 K ]
  Authors: Y.T. Rebane, Y.G. Shreter
• p41 Formation of Misfit Dislocation Networks in Ge/Si as Dependent on the Substrate Orientation   [ 340 K ]
  Authors: M. Albrecht, S. Christiansen, P.O. Hansson, Horst P. Strunk, E. Bauser
• p47 In Situ Observations of Dislocation Motion in Polycrystalline Silicon during Straining Experiment in a High-Voltage Electron Microscope   [ 465 K ]
  Authors: M. Werner, Martin Bartsch, U. Messerschmidt, D. Baither
• p55 Theoretical Study of the Atomic and Electronic Structures of Grain Boundaries in Semiconductors   [ 716 K ]
  Authors: Masanori Kohyama, R. Yamamoto
• p67 Structure of Grain Boundaries in Polycrystalline Semiconductors   [ 593 K ]
  Authors: S. McKernan, C.B. Carter
• p75 High Temperature Atomic Simulations of Grain Boundaries in Semiconductors Using a New Type of Periodic Boundary Conditions   [ 506 K ]
  Authors: O.B.M. Hardouin Duparc
• p85 Calculation of the Free Energy of Different Configurations of {001}Σ=13 Grain Boundary in Silicon by the Quasiharmonic Method   [ 204 K ]
  Authors: B. Lebouvier, A. Hairie, F. Hairie, Gerard Nouet, E. Paumier
• p91 Improved Quasiharmonic Methods for Grain Boundary Free Energy Calculations in Silicon   [ 195 K ]
  Authors: A. Hairie, F. Hairie, Gerard Nouet, E. Paumier, A.P. Sutton
• p97 Calculation of Grain Boundary Free Energy by Molecular Dynamics and Tests on Silicon Perfect Crystal   [ 248 K ]
  Authors: N. Ralantoson, A. Hairie, F. Hairie, O.B.M. Hardouin Duparc, M. Hou, Gerard Nouet, E. Paumier
• p103 Möbius Tight Binding Calculations for Grain Boundaries   [ 141 K ]
  Authors: O.B.M. Hardouin Duparc, M. Torrent
• p107 Structural and Electrical Transport Properties of Grain Boundaries in High Temperature Superconductors   [ 763 K ]
  Authors: R. Gross