Paper Title:
Oxygen and Copper Precipitation in the Vicinity of the Silicon-Silicon-Dioxide Interface: Microstructure and Electrical Properties
  Abstract

  Info
Periodical
Solid State Phenomena (Volumes 37-38)
Edited by
H.P. Strunk, J.H. Werner, B. Fortin and O. Bonnaud
Pages
133-138
DOI
10.4028/www.scientific.net/SSP.37-38.133
Citation
A. Correia, D. Ballutaud, J.L. Maurice, "Oxygen and Copper Precipitation in the Vicinity of the Silicon-Silicon-Dioxide Interface: Microstructure and Electrical Properties", Solid State Phenomena, Vols. 37-38, pp. 133-138, 1994
Online since
March 1994
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Price
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