Determination of Crystallisation Parameters of a-Si from In Situ Conductance Measurements and Transmission Electron Microscopy Analysis |
| Journal |
Solid State Phenomena (Volumes 37 - 38) |
| Volume |
Polycrystalline Semiconductors III |
| Edited by |
H.P. Strunk, J.H. Werner, B. Fortin and O. Bonnaud |
| Pages |
311-316 |
| DOI |
10.4028/www.scientific.net/SSP.37-38.311 |
| Citation |
T. Kretz et al., 1994, Solid State Phenomena, 37-38, 311 |
| Authors |
T. Kretz, R. Stroh, P. Legagneux, O. Huet, M. Magis, Didier Pribat |
| Keywords |
Crystallization, Disilane, Low Pressure Chemical Vapor Deposition, Poly-Silicon, Silane, Ultra High Vacuum Chemical Vapor Deposition |
| Full Paper |
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