Paper Title:
Microstructure and Transistor Properties of Solid-State-Crystallised Polysilicon: Effect of a Prolonged 600°C Anneal
  Abstract

  Info
Periodical
Solid State Phenomena (Volumes 37-38)
Edited by
H.P. Strunk, J.H. Werner, B. Fortin and O. Bonnaud
Pages
335-342
DOI
10.4028/www.scientific.net/SSP.37-38.335
Citation
J.L. Maurice, J. Dixmier, T. Kretz, P. Legagneux, F. Plais, D. Pribat, "Microstructure and Transistor Properties of Solid-State-Crystallised Polysilicon: Effect of a Prolonged 600°C Anneal", Solid State Phenomena, Vols. 37-38, pp. 335-342, 1994
Online since
March 1994
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Price
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