Formation of Misfit Dislocation Networks in Ge/Si as Dependent on the Substrate Orientation |
| Journal |
Solid State Phenomena (Volumes 37 - 38) |
| Volume |
Polycrystalline Semiconductors III |
| Edited by |
H.P. Strunk, J.H. Werner, B. Fortin and O. Bonnaud |
| Pages |
41-46 |
| DOI |
10.4028/www.scientific.net/SSP.37-38.41 |
| Citation |
M. Albrecht et al., 1994, Solid State Phenomena, 37-38, 41 |
| Authors |
M. Albrecht, S. Christiansen, P.O. Hansson, Horst P. Strunk, E. Bauser |
| Keywords |
Finite Element Calculation, Ge on Si(001) and (110), Hetero-Epitaxy, Secondary Glide Plane, Stranski-Krastanov Growth, TEM |
| Full Paper |
Get the full paper by clicking here
|
