Paper Title:
Performance of Poly-Si Thin Film Transistors Fabricated by Excimer-Laser Annealing of SiH4- and Si2H6- Source Low Pressure Vapor Deposited a-Si Films with or without Solid-Phase Crystallization
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Periodical
Solid State Phenomena (Volumes 37-38)
Edited by
H.P. Strunk, J.H. Werner, B. Fortin and O. Bonnaud
Pages
565-570
DOI
10.4028/www.scientific.net/SSP.37-38.565
Citation
M. Fuse, I. Asai, M. Hirota, Y. Miyamoto, "Performance of Poly-Si Thin Film Transistors Fabricated by Excimer-Laser Annealing of SiH4- and Si2H6- Source Low Pressure Vapor Deposited a-Si Films with or without Solid-Phase Crystallization", Solid State Phenomena, Vols. 37-38, pp. 565-570, 1994
Online since
March 1994
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Price
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