Paper Title:
Hydrogenated Amorphous Silicon Thin Film Transistors with a Single Layered SiO2 Gate Insulator
  Abstract

  Info
Periodical
Solid State Phenomena (Volumes 44-46)
Edited by
Hans Neber-Aeschbacher
Pages
973-982
DOI
10.4028/www.scientific.net/SSP.44-46.973
Citation
S. K. Kim, K. S. Lee, J.H. Kim, C.H. Hong, J. Jang, "Hydrogenated Amorphous Silicon Thin Film Transistors with a Single Layered SiO2 Gate Insulator", Solid State Phenomena, Vols. 44-46, pp. 973-982, 1995
Online since
July 1995
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Price
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