Silicon Carbide - A Promising Wide-Band-Gap Semiconductor for Electronic Devices |
|
| Journal | Solid State Phenomena (Volumes 47 - 48) |
|---|---|
| Volume | Gettering and Defect Engineering in Semiconductor Technology VI |
| Edited by | H. Richter, M. Kittler and C. Claeys |
| Pages | 115-126 |
| DOI | 10.4028/www.scientific.net/SSP.47-48.115 |
| Citation | Gerhard Pensl et al., 1995, Solid State Phenomena, 47-48, 115 |
| Authors | Gerhard Pensl, T. Troffer |
| Full Paper | 
Get the full paper by clicking here
|
First page example
