Paper Title:
Silicon Carbide - A Promising Wide-Band-Gap Semiconductor for Electronic Devices
  Abstract

  Info
Periodical
Solid State Phenomena (Volumes 47-48)
Edited by
H. Richter, M. Kittler and C. Claeys
Pages
115-126
DOI
10.4028/www.scientific.net/SSP.47-48.115
Citation
G. Pensl, T. Troffer, "Silicon Carbide - A Promising Wide-Band-Gap Semiconductor for Electronic Devices", Solid State Phenomena, Vols. 47-48, pp. 115-126, 1996
Online since
July 1995
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.