Paper Title:
Infrared Studies of Oxygen Precipitation Related Defects in Silicon after Various Thermal Treatments
  Abstract

  Info
Periodical
Solid State Phenomena (Volumes 47-48)
Edited by
H. Richter, M. Kittler and C. Claeys
Pages
229-236
DOI
10.4028/www.scientific.net/SSP.47-48.229
Citation
J. Vanhellemont, G. Kissinger, P. Clauws, A. Kaniava, M. Libezny, E. Gaubas, E. Simoen, H. Richter, C. Claeys, "Infrared Studies of Oxygen Precipitation Related Defects in Silicon after Various Thermal Treatments", Solid State Phenomena, Vols. 47-48, pp. 229-236, 1996
Online since
July 1995
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Price
$32.00
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